Microsemi Corporation APT100GT120JR

SKU: APT100GT120JR-9

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Manufacturer Part :
APT100GT120JR
Manufacturer :
Microsemi Corporation
Package :
SOT-227-4, miniBLOC
RoHS :
RoHS Compliant
APT100GT120JR Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Published

1999

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Pin Count

4

Factory Lead Time

24 Weeks

Series

Thunderbolt IGBT®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

Max Power Dissipation

570W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Operating Temperature

-55°C~150°C TJ

Configuration

Single

Input Capacitance

6.7nF

Turn On Time

150 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

123A

Current - Collector Cutoff (Max)

100μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Case Connection

ISOLATED

Power - Max

570W

Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 100A

Turn Off Time-Nom (toff)

747 ns

IGBT Type

NPT

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

6.7nF @ 25V

VCEsat-Max

3.7 V

RoHS Status

RoHS Compliant

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