Microsemi Corporation APT15GT120BRDQ1G

SKU: APT15GT120BRDQ1G-9

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Manufacturer Part :
APT15GT120BRDQ1G
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT15GT120BRDQ1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-30 Code

R-PSFM-T3

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 15A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

Thunderbolt IGBT®

JESD-609 Code

e1

Published

1999

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Additional Feature

HIGH SPEED

Voltage - Rated DC

1.2kV

Max Power Dissipation

250W

Current Rating

36A

Pin Count

3

Mount

Through Hole

Factory Lead Time

29 Weeks

IGBT Type

NPT

Gate Charge

105nC

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

36A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

21 ns

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 15A

Continuous Collector Current

36A

Turn Off Time-Nom (toff)

137 ns

Case Connection

COLLECTOR

Element Configuration

Single

Current - Collector Pulsed (Icm)

45A

Td (on/off) @ 25°C

10ns/85ns

Switching Energy

585μJ (on), 260μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6.5V

Height

5.31mm

Length

21.46mm

Width

16.26mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Input Type

Standard

Lead Free

Contains Lead

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