Microsemi Corporation APT25GP90BDQ1G

SKU: APT25GP90BDQ1G-9

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Manufacturer Part :
APT25GP90BDQ1G
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT25GP90BDQ1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Test Conditions

600V, 40A, 4.3Ohm, 15V

Max Operating Temperature

150°C

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Not For New Designs

Series

POWER MOS 7®

Published

1999

Packaging

Tube

Min Operating Temperature

-55°C

Operating Temperature

-55°C~150°C TJ

Current-Collector (Ic) (Max)

72A

Collector-Emitter Breakdown Voltage

900V

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

Factory Lead Time

19 Weeks

Max Power Dissipation

417W

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 25A

RoHS Status

RoHS Compliant

Switching Energy

370μJ (off)

Td (on/off) @ 25°C

13ns/55ns

Current - Collector Pulsed (Icm)

110A

Gate Charge

110nC

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

900V

Voltage - Rated DC

900V

Max Collector Current

72A

Collector Emitter Voltage (VCEO)

900V

Power - Max

417W

Input Type

Standard

Element Configuration

Single

Current Rating

72A

Lead Free

Lead Free

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