Microsemi Corporation APT35GP120B2DQ2G

SKU: APT35GP120B2DQ2G-9

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Manufacturer Part :
APT35GP120B2DQ2G
Manufacturer :
Microsemi Corporation
Package :
TO-247-3 Variant
RoHS :
RoHS Compliant
APT35GP120B2DQ2G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Published

1999

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 35A, 4.3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Voltage - Rated DC

1.2kV

Packaging

Tube

Series

POWER MOS 7®

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Mount

Through Hole

Factory Lead Time

33 Weeks

Turn On Time

36 ns

Current Rating

96A

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

96A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 35A

Turn Off Time-Nom (toff)

220 ns

Max Power Dissipation

543W

IGBT Type

PT

Gate Charge

150nC

Current - Collector Pulsed (Icm)

140A

Td (on/off) @ 25°C

16ns/95ns

Switching Energy

750μJ (on), 680μJ (off)

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Pin Count

3

Lead Free

Lead Free

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