Microsemi Corporation APT40GP90B2DQ2G

SKU: APT40GP90B2DQ2G-9

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Manufacturer Part :
APT40GP90B2DQ2G
Manufacturer :
Microsemi Corporation
Package :
TO-247-3 Variant
RoHS :
RoHS Compliant
APT40GP90B2DQ2G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Voltage - Rated DC

900V

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

600V, 40A, 4.3 Ω, 15V

Packaging

Tube

Published

1999

Operating Temperature

-55°C~150°C TJ

Series

POWER MOS 7®

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Additional Feature

LOW CONDUCTION LOSS

Mount

Through Hole

Factory Lead Time

30 Weeks

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 40A

Turn Off Time-Nom (toff)

220 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Max Collector Current

101A

Turn On Time

37 ns

Current Rating

101A

Max Power Dissipation

543W

IGBT Type

PT

Gate Charge

145nC

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

14ns/90ns

Switching Energy

795μJ (off)

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Pin Count

3

Lead Free

Lead Free

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