Microsemi Corporation APT65GP60L2DQ2G

SKU: APT65GP60L2DQ2G-9

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Manufacturer Part :
APT65GP60L2DQ2G
Manufacturer :
Microsemi Corporation
Package :
TO-264-3, TO-264AA
RoHS :
RoHS Compliant
APT65GP60L2DQ2G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Voltage - Rated DC

600V

Package / Case

TO-264-3, TO-264AA

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 65A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

1999

Series

POWER MOS 7®

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Mounting Type

Through Hole

Mount

Through Hole

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 65A

Turn Off Time-Nom (toff)

220 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

198A

Turn On Time

85 ns

Current Rating

198A

Max Power Dissipation

833W

IGBT Type

PT

Gate Charge

210nC

Current - Collector Pulsed (Icm)

250A

Td (on/off) @ 25°C

30ns/90ns

Switching Energy

605μJ (on), 895μJ (off)

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Pin Count

3

Lead Free

Lead Free

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