Microsemi Corporation APTGF50VDA120T3G

SKU: APTGF50VDA120T3G-9

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Manufacturer Part :
APTGF50VDA120T3G
Manufacturer :
Microsemi Corporation
Package :
SP3
RoHS :
RoHS Compliant
APTGF50VDA120T3G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Configuration

Dual Boost Chopper

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Published

2012

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

20

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

ECCN Code

EAR99

Max Power Dissipation

312W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

25

JESD-30 Code

R-XUFM-X20

Qualification Status

Not Qualified

Package / Case

SP3

Mounting Type

Chassis Mount

Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 50A

Turn Off Time-Nom (toff)

400 ns

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

70A

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

3.45nF

Turn On Time

100 ns

Case Connection

ISOLATED

Element Configuration

Dual

IGBT Type

NPT

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

3.45nF @ 25V

Height

11.5mm

Length

73.4mm

Width

40.8mm

RoHS Status

RoHS Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

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