Microsemi Corporation APTGT100DA120TG

SKU: APTGT100DA120TG-9

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Manufacturer Part :
APTGT100DA120TG
Manufacturer :
Microsemi Corporation
Package :
SP4
RoHS :
RoHS Compliant
APTGT100DA120TG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Published

2006

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e1

Number of Terminations

12

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

480W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mounting Type

Chassis Mount

Mount

Chassis Mount

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Configuration

Single

Case Connection

ISOLATED

Power - Max

480W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

140A

JESD-30 Code

R-XUFM-X12

Pin Count

12

Input Capacitance

7.2nF

Turn On Time

340 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 100A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

7.2nF @ 25V

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

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