Microsemi Corporation APTGT100DA170TG

SKU: APTGT100DA170TG-9

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Manufacturer Part :
APTGT100DA170TG
Manufacturer :
Microsemi Corporation
Package :
SP4
RoHS :
RoHS Compliant
APTGT100DA170TG Datasheet :
APTGT100DA170TG

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JESD-609 Code

e1

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

560W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Mount

Chassis Mount, Screw

Factory Lead Time

22 Weeks

Max Collector Current

150A

Pin Count

12

Qualification Status

Not Qualified

Configuration

Single

Case Connection

ISOLATED

Power - Max

560W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1700V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Capacitance

9nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 100A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

9nF @ 25V

VCEsat-Max

2.4 V

JESD-30 Code

R-XUFM-X12

RoHS Status

RoHS Compliant

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