Microsemi Corporation APTGT200DA60TG

SKU: APTGT200DA60TG-9

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Manufacturer Part :
APTGT200DA60TG
Manufacturer :
Microsemi Corporation
Package :
SP4
RoHS :
RoHS Compliant
APTGT200DA60TG Datasheet :
APTGT200DA60TG

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Part Status

Discontinued

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature

-40°C~175°C TJ

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pbfree Code

yes

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

625W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Chassis Mount

Mount

Chassis Mount

Max Collector Current

290A

JESD-30 Code

R-XUFM-X12

Configuration

Single

Case Connection

ISOLATED

Power - Max

625W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

Current - Collector Cutoff (Max)

250μA

Input Capacitance

12.3nF

Pin Count

12

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 200A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

12.3nF @ 25V

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

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