Microsemi Corporation APTGT200DU60TG

SKU: APTGT200DU60TG-9

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Manufacturer Part :
APTGT200DU60TG
Manufacturer :
Microsemi Corporation
Package :
SP4
RoHS :
RoHS Compliant
APTGT200DU60TG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

2

Operating Temperature

-40°C~175°C TJ

Terminal Form

UNSPECIFIED

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

625W

Terminal Position

UPPER

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Input

Standard

Collector Emitter Voltage (VCEO)

600V

JESD-30 Code

R-XUFM-X12

Qualification Status

Not Qualified

Configuration

Dual, Common Source

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

625W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

12

Max Collector Current

290A

Current - Collector Cutoff (Max)

250μA

Input Capacitance

12.3nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 200A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

12.3nF @ 25V

RoHS Status

RoHS Compliant

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