Microsemi Corporation APTGT200H60G

SKU: APTGT200H60G-9

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Manufacturer Part :
APTGT200H60G
Manufacturer :
Microsemi Corporation
Package :
SP6
RoHS :
RoHS Compliant
APTGT200H60G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Operating Temperature

-40°C~175°C TJ

Terminal Position

UPPER

JESD-609 Code

e1

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

625W

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Max Collector Current

290A

Pin Count

12

Case Connection

ISOLATED

Power - Max

625W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Current - Collector Cutoff (Max)

250μA

Input Capacitance

12.3nF

Terminal Form

UNSPECIFIED

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 200A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

12.3nF @ 25V

Configuration

Full Bridge Inverter

RoHS Status

RoHS Compliant

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