Microsemi Corporation APTGT20A60T1G

SKU: APTGT20A60T1G-9

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Manufacturer Part :
APTGT20A60T1G
Manufacturer :
Microsemi Corporation
Package :
SP1
RoHS :
RoHS Compliant
APTGT20A60T1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Part Status

Obsolete

Package / Case

SP1

Number of Pins

1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

2

Operating Temperature

-40°C~175°C TJ

Published

2007

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

62W

Terminal Position

UPPER

Terminal Form

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mounting Type

Chassis Mount

Mount

Chassis Mount

Max Collector Current

32A

Qualification Status

Not Qualified

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

62W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

Current - Collector Cutoff (Max)

250μA

Input Capacitance

1.1nF

Pin Count

12

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 20A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.1nF @ 25V

Configuration

Half Bridge

RoHS Status

RoHS Compliant

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