Microsemi Corporation APTGT35A120D1G

SKU: APTGT35A120D1G-9

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Manufacturer Part :
APTGT35A120D1G
Manufacturer :
Microsemi Corporation
Package :
D1
RoHS :
RoHS Compliant
APTGT35A120D1G Datasheet :
APTGT35A120D1G

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  • Warranty 1 year
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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Mount

Chassis Mount

Mounting Type

Chassis Mount

Package / Case

D1

Supplier Device Package

D1

Collector-Emitter Breakdown Voltage

1.2kV

Current-Collector (Ic) (Max)

55A

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

205W

Configuration

Half Bridge

Power - Max

205W

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

55A

Current - Collector Cutoff (Max)

5mA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

2.5nF

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 35A

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

2.5nF @ 25V

RoHS Status

RoHS Compliant

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