Microsemi Corporation APTGT35H120T3G

SKU: APTGT35H120T3G-9

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Manufacturer Part :
APTGT35H120T3G
Manufacturer :
Microsemi Corporation
Package :
SP3
RoHS :
RoHS Compliant
APTGT35H120T3G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

4

Operating Temperature

-40°C~150°C TJ

Terminal Form

UNSPECIFIED

JESD-609 Code

e1

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

208W

Terminal Position

UPPER

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Current - Collector Cutoff (Max)

250μA

JESD-30 Code

R-XUFM-X25

Case Connection

ISOLATED

Power - Max

208W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

55A

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

2.5nF

Pin Count

25

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 35A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

2.5nF @ 25V

Radiation Hardening

No

Configuration

Full Bridge Inverter

RoHS Status

RoHS Compliant

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