Microsemi Corporation APTGT50A120T1G

SKU: APTGT50A120T1G-9

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Manufacturer Part :
APTGT50A120T1G
Manufacturer :
Microsemi Corporation
Package :
SP1
RoHS :
RoHS Compliant
APTGT50A120T1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Terminal Form

THROUGH-HOLE

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

277W

Terminal Position

UPPER

Published

2012

Pin Count

12

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

3.6nF

Case Connection

ISOLATED

Power - Max

277W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

75A

Current - Collector Cutoff (Max)

250μA

Configuration

Half Bridge

Element Configuration

Dual

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

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