Microsemi Corporation APTGT50DH120T3G

SKU: APTGT50DH120T3G-9

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Manufacturer Part :
APTGT50DH120T3G
Manufacturer :
Microsemi Corporation
Package :
SP3
RoHS :
RoHS Compliant
APTGT50DH120T3G Datasheet :
APTGT50DH120T3G

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Element Configuration

Dual

Package / Case

SP3

Number of Pins

16

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

11

Part Status

Obsolete

ECCN Code

EAR99

Max Power Dissipation

277W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Pin Count

25

JESD-30 Code

R-XUFM-X11

Configuration

Asymmetrical Bridge

Mounting Type

Chassis Mount

Mount

Chassis Mount, Screw

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

75A

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

3.6nF

Power - Max

277W

Case Connection

ISOLATED

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

VCEsat-Max

2.1 V

Radiation Hardening

No

Transistor Application

POWER CONTROL

RoHS Status

RoHS Compliant

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