Microsemi Corporation APTGT50H120T3G

SKU: APTGT50H120T3G-9

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Manufacturer Part :
APTGT50H120T3G
Manufacturer :
Microsemi Corporation
Package :
SP3
RoHS :
RoHS Compliant
APTGT50H120T3G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

4

Operating Temperature

-40°C~150°C TJ

Terminal Position

UPPER

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

270W

Published

2006

Terminal Form

UNSPECIFIED

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

270W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

75A

Pin Count

25

JESD-30 Code

R-XUFM-X25

Input Capacitance

3.6nF

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

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