Microsemi Corporation APTGT50TL601G

SKU: APTGT50TL601G-9

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Manufacturer Part :
APTGT50TL601G
Manufacturer :
Microsemi Corporation
Package :
SP1
RoHS :
RoHS Compliant
APTGT50TL601G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Published

2012

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

4

Pin Count

12

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

10

ECCN Code

EAR99

Max Power Dissipation

176W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Operating Temperature

-40°C~175°C TJ

JESD-30 Code

R-XUFM-X10

Input Capacitance

3.15nF

Turn On Time

170 ns

Power - Max

176W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Current - Collector Cutoff (Max)

250μA

Configuration

Three Level Inverter

Case Connection

ISOLATED

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

3.15nF @ 25V

VCEsat-Max

1.9 V

RoHS Status

RoHS Compliant

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