Microsemi Corporation APTGV25H120T3G

SKU: APTGV25H120T3G-9

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Manufacturer Part :
APTGV25H120T3G
Manufacturer :
Microsemi Corporation
Package :
SP3
RoHS :
RoHS Compliant
APTGV25H120T3G Datasheet :
APTGV25H120T3G

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Part Status

Obsolete

Package / Case

SP3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

4

Operating Temperature (Max.)

150°C

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pbfree Code

yes

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

156W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Chassis Mount

Mount

Chassis Mount, Screw

Current - Collector Cutoff (Max)

250μA

JESD-30 Code

R-XUFM-X25

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

156W

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

40A

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

1.8nF

Pin Count

25

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 25A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

NPT, Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.8nF @ 25V

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

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