Microsemi Corporation APTGV50H120BTPG

SKU: APTGV50H120BTPG-9

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Manufacturer Part :
APTGV50H120BTPG
Manufacturer :
Microsemi Corporation
Package :
SP6
RoHS :
RoHS Compliant
APTGV50H120BTPG Datasheet :
APTGV50H120BTPG

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Part Status

Obsolete

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

6

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature (Max.)

150°C

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Chassis Mount, Screw

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

21

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

270W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Pbfree Code

yes

Pin Count

21

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Configuration

Boost Chopper, Full Bridge

Case Connection

ISOLATED

Power - Max

270W

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

75A

JESD-30 Code

R-XUFM-X21

Qualification Status

Not Qualified

Input Capacitance

3.6nF

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

NPT, Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

RoHS Status

RoHS Compliant

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