Nexperia USA Inc. PSMN070-200P,127

SKU: PSMN070-200P,127-11

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Manufacturer Part :
PSMN070-200P,127
Manufacturer :
Nexperia USA Inc.
Package :
TO-220-3
RoHS :
RoHS Compliant
PSMN070-200P,127 Datasheet :

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Description

Specification

Processor

Manufacturer

Nexperia USA Inc.

Operating Temperature

-55°C~175°C TJ

Mounting Type

Through Hole

Package / Case

TO-220-3

Surface Mount

NO

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

35A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

250W Tc

Pin Count

3

Factory Lead Time

20 Weeks

Packaging

Tube

Published

2002

Series

TrenchMOS™

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.75

Turn Off Delay Time

80 ns

Element Configuration

Single

Vgs (Max)

±20V

Fall Time (Typ)

90 ns

Case Connection

DRAIN

Turn On Delay Time

22 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

70m Ω @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

4570pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

77nC @ 10V

Rise Time

100ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

250W

Continuous Drain Current (ID)

35A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

200V

Drain-source On Resistance-Max

0.07Ohm

Drain to Source Breakdown Voltage

200V

Pulsed Drain Current-Max (IDM)

140A

Avalanche Energy Rating (Eas)

462 mJ

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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