NTE Electronics, Inc. NTE6402

Compare

20 People watching this product now!

Pick up from the Woodmart Store

To pick up today

Free

Courier delivery

Our courier will deliver to the specified address

2-3 Days

Free

DHL Courier delivery

DHL courier will deliver to the specified address

2-3 Days

Free

Warranty 1 year

More details

Free 30-Day returns

More details

Payment Methods:

Description

Specification

Processor

Manufacturer	NTE Electronics
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Surface Mount	NO
Ihs Manufacturer	NTE ELECTRONICS INC
Manufacturer Part Number	NTE6402
Mfr	NTE Electronics, Inc
Package	Bag
Part Life Cycle Code	Active
Power Dissipation (Max)	300 mW
Product Status	Active
Risk Rank	2.1
ECCN Code	EAR99
Reach Compliance Code	unknown
Voltage	40V
Voltage - Output	6V
Trigger Device Type	PROGRAMMABLE UJT
On-State Voltage-Max	1.6 V
Current - Peak	2 µA
Current - Valley (Iv)	50 µA
Current - Gate to Anode Leakage (Igao)	10 nA
Voltage - Offset (Vt)	1.6 V

Customer Reviews

Rated 0 out of 5

0 reviews

Rated 5 out of 5

0

Rated 4 out of 5

0

Rated 3 out of 5

0

Rated 2 out of 5

0

Rated 1 out of 5

0

Reviews

Clear filters

There are no reviews yet.

Be the first to review “NTE Electronics, Inc. NTE6402”

Your email address will not be published. Required fields are marked *

Your rating *

Value for money

1 2 3 4 5

Durability

1 2 3 4 5

Delivery speed

1 2 3 4 5

Your review *

Pros

Cons

Name *

Email *

Related Products

Compare

Quick view

Fairchild J112-D27Z

Rated 0 out of 5

In stock

SKU: J112-D27Z-9

Manufacturer	Fairchild
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Mfr	Fairchild Semiconductor
Package	Bulk
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Power - Max	625 mW
FET Type	N-Channel
Current - Drain (Idss) @ Vds (Vgs=0)	5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id	1 V @ 1 µA
Voltage - Breakdown (V(BR)GSS)	35 V
Resistance - RDS(On)	50 Ohms

Compare

Quick view

Fairchild MMBFJ175

Rated 0 out of 5

In stock

SKU: MMBFJ175-9

Manufacturer	Fairchild
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Product Number	MMBFJ1
Mfr	Fairchild Semiconductor
Package	Bulk
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Power - Max	225 mW
FET Type	P-Channel
Current - Drain (Idss) @ Vds (Vgs=0)	7 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id	3 V @ 10 nA
Voltage - Breakdown (V(BR)GSS)	30 V
Resistance - RDS(On)	125 Ohms

Compare

Quick view

Fairchild PN5432

Rated 0 out of 5

In stock

SKU: PN5432-9

Manufacturer	Fairchild
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3
Mfr	Fairchild Semiconductor
Package	Bulk
Product Status	Obsolete
Operating Temperature	-55°C ~ 150°C (TJ)
Power - Max	350 mW
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 10V (VGS)
Current - Drain (Idss) @ Vds (Vgs=0)	150 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id	4 V @ 3 nA
Voltage - Breakdown (V(BR)GSS)	25 V
Resistance - RDS(On)	5 Ohms

Linearin LSK170B-SOT-23-3L-CT Real Image

Compare

Quick view

Linearin LSK170B-SOT-23-3L-CT

Rated 0 out of 5

In stock

SKU: LSK170B-SOT-23-3L-CT-9

Manufacturer	Linearin
Package / Case	SOT-23-3
Mounting Style	SMD/SMT
Drain-Source Current at Vgs=0	12 mA
Gate-Source Cutoff Voltage	– 2 V
Id - Continuous Drain Current	2 mA
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	– 55 C
Pd - Power Dissipation	400 mW
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Breakdown Voltage	– 40 V
Series	LSBF510 NPoS
Technology	Si
Configuration	Single

Compare

Quick view

Linearin LSK389A-TO-71-6L-BK

Rated 0 out of 5

In stock

SKU: LSK389A-TO-71-6L-BK-9

Manufacturer	Linearin
Package / Case	TO-71-6
Mounting Style	Through Hole
Drain-Source Current at Vgs=0	6.5 mA
Gate-Source Cutoff Voltage	6 mV
Id - Continuous Drain Current	2 mA
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	– 55 C
Pd - Power Dissipation	400 mW
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Breakdown Voltage	– 40 V
Series	LSK389
Technology	Si
Configuration	Dual

Compare

Quick view

Linearin LSK389BSOIC8LTB

Rated 0 out of 5

In stock

SKU: LSK389BSOIC8LTB-9

Manufacturer	Linearin
Package / Case	SOIC-8
Mounting Style	SMD/SMT
Drain-Source Current at Vgs=0	12 mA
Gate-Source Cutoff Voltage	6 mV
Id - Continuous Drain Current	2 mA
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	– 55 C
Pd - Power Dissipation	400 mW
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Breakdown Voltage	– 40 V
Series	LSK389
Configuration	Dual

Compare

Quick view

Microchip 2N4858UB

Rated 0 out of 5

In stock

SKU: 2N4858UB-9

Manufacturer	Microchip
Mfr	Microchip Technology
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-18-3
Surface Mount	YES
Supplier Device Package	3-UB (3.09×2.45)
Number of Terminals	3
Transistor Element Material	SILICON
Mounting Style	Through Hole
Base Product Number	2N4858
Base/Housing Material	Polyamide 46
Body Orientation	Straight
Brand	Microchip Technology
Factory Pack Quantity:Factory Pack Quantity	1
Ihs Manufacturer	MICROSEMI CORP
Pbfree Code	No
Contact Material	Phosphor Bronze
Mounting	Surface Mount
Operating Temperature-Max	175 °C
Package	Bulk
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Package Description	SMALL OUTLINE, R-CDSO-N3
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Part Life Cycle Code	Active
Product Status	Active
Reflow Temperature-Max (s)	NOT SPECIFIED
Risk Rank	5.09
Rohs Code	No
Termination Method	Solder
Operating Temperature	-40 to 105 °C
JESD-609 Code	e0
Manufacturer Part Number	2N4858UB
ECCN Code	EAR99
Configuration	SINGLE
Operating Mode	DEPLETION MODE
HTS Code	8541.21.00.95
Subcategory	Transistors
Pitch	2.5400 mm
Technology	Si
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Pin Count	3
JESD-30 Code	R-CDSO-N3
Qualification Status	Not Qualified
Contact Gender	Socket
Housing Color	Red
Number of Elements	1
Type	JFET
Terminal Finish	TIN LEAD
Power - Max	360 mW
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	18pF @ 10V (VGS)
Drain to Source Voltage (Vdss)	40 V
Polarity/Channel Type	N-CHANNEL
Product Type	JFETs
Drain-source On Resistance-Max	60 Ω
DS Breakdown Voltage-Min	40 V
FET Technology	JUNCTION
Feedback Cap-Max (Crss)	8 pF
Current - Drain (Idss) @ Vds (Vgs=0)	8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id	4 V @ 500 pA
Voltage - Breakdown (V(BR)GSS)	40 V
Resistance - RDS(On)	60 Ohms
Product Category	JFET
Product Length	19.8 mm

Compare

Quick view

Microchip MQ2N3822

Rated 0 out of 5

In stock

SKU: MQ2N3822-9

Manufacturer	Microchip
Mount	Through Hole
Number of Pins	3
Max Operating Temperature	200 °C
Min Operating Temperature	-55 °C
Element Configuration	Single
Gate to Source Voltage (Vgs)	50 V
Radiation Hardening	No

Compare

Quick view

NEC 2SK425-T1B-A

Rated 0 out of 5

In stock

SKU: 2SK425-T1B-A-9

Manufacturer	NEC
Ihs Manufacturer	RENESAS ELECTRONICS CORP
Manufacturer Package Code	PLSP0003ZD-A3
Manufacturer Part Number	2SK425-T1B-A
Package Description	,
Part Life Cycle Code	Obsolete
Part Package Code	MM
Reflow Temperature-Max (s)	NOT SPECIFIED
Risk Rank	5.83
Rohs Code	Yes
Pbfree Code	Yes
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Pin Count	3
Brand Name	Renesas

Compare

Quick view

Qorvo UJ4C075033B7S

Rated 0 out of 5

In stock

SKU: UJ4C075033B7S-9

Manufacturer	Qorvo
Package / Case	D2PAK-7L
Mounting Style	SMD/SMT
Id - Continuous Drain Current	44 A
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	– 55 C
Pd - Power Dissipation	197 W
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	750 V
Technology	SiC

Compare

Quick view

Qorvo UJ4C075033K3S

Rated 0 out of 5

In stock

SKU: UJ4C075033K3S-9

Manufacturer	Qorvo
Package / Case	TO-247-3
Mounting Style	SMD/SMT
Id - Continuous Drain Current	47 A
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	– 55 C
Pd - Power Dissipation	242 W
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	750 V
Series	UJ4C
Technology	SiC

Compare

Quick view

Qorvo UJ4C075060K4S

Rated 0 out of 5

In stock