ON Semiconductor 2N5457G

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Description

Specification

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Manufacturer	ON Semiconductor
Pbfree Code	yes
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Transistor Element Material	SILICON
Number of Elements	1
Operating Temperature	135°C TJ
Packaging	Bulk
Published	2006
Max Power Dissipation	310mW
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW NOISE
HTS Code	8541.21.00.95
Voltage - Rated DC	25V
Mounting Type	Through Hole
Mount	Through Hole
FET Type	N-Channel
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	2N5457
Pin Count	3
Qualification Status	Not Qualified
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	200mW
Transistor Application	SWITCHING
Input Capacitance (Ciss) (Max) @ Vds	7pF @ 15V
Terminal Position	BOTTOM
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	25V
FET Technology	JUNCTION
Drain to Source Resistance	2mOhm
Current - Drain (Idss) @ Vds (Vgs=0)	1mA @ 15V
Voltage - Cutoff (VGS off) @ Id	500mV @ 10nA
RoHS Status	RoHS Compliant
Current Rating	10mA
Lead Free	Lead Free

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