ON Semiconductor 2N5461G

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Description

Specification

Processor

Manufacturer	ON Semiconductor
Max Power Dissipation	350mW
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Transistor Element Material	SILICON
Number of Elements	1
Operating Temperature	-65°C~135°C TJ
Packaging	Bulk
JESD-609 Code	e1
Pbfree Code	yes
Published	2001
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW NOISE
HTS Code	8541.21.00.95
Voltage - Rated DC	-40V
Mounting Type	Through Hole
Mount	Through Hole
FET Type	P-Channel
Transistor Application	AMPLIFIER
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	2N5461
Pin Count	3
Qualification Status	Not Qualified
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power - Max	350mW
Peak Reflow Temperature (Cel)	260
Terminal Position	BOTTOM
Input Capacitance (Ciss) (Max) @ Vds	7pF @ 15V
Gate to Source Voltage (Vgs)	40V
FET Technology	JUNCTION
Feedback Cap-Max (Crss)	2 pF
Current - Drain (Idss) @ Vds (Vgs=0)	2mA @ 15V
Voltage - Cutoff (VGS off) @ Id	1V @ 1μA
RoHS Status	RoHS Compliant
Current Rating	10mA
Lead Free	Lead Free

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