ON Semiconductor 2SK3666-4-TB-E

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Description

Specification

Processor

Manufacturer	ON Semiconductor
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e6
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin/Bismuth (Sn/Bi)
Max Power Dissipation	200mW
Base Part Number	2SK3666
Element Configuration	Single
Power Dissipation	200mW
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4pF @ 10V
Continuous Drain Current (ID)	10mA
Gate to Source Voltage (Vgs)	-30V
Drain to Source Breakdown Voltage	30V
Current - Drain (Idss) @ Vds (Vgs=0)	2.5mA @ 10V
Voltage - Cutoff (VGS off) @ Id	180mV @ 1μA
Voltage - Breakdown (V(BR)GSS)	30V
Resistance - RDS(On)	200Ohm
RoHS Status	RoHS Compliant
Lead Free	Lead Free

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