ON Semiconductor FGA15S125P

SKU: FGA15S125P-9

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Manufacturer Part :
FGA15S125P
Manufacturer :
ON Semiconductor
Package :
TO-3P-3, SC-65-3
RoHS :
ROHS3 Compliant
FGA15S125P Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Number of Pins

3

Weight

6.401g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.25kV

Number of Elements

1

Max Power Dissipation

136W

Factory Lead Time

4 Weeks

Published

2013

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.72V @ 15V, 15A

Turn Off Time-Nom (toff)

670 ns

Power Dissipation

136W

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.25kV

Max Collector Current

30A

Voltage - Collector Emitter Breakdown (Max)

1250V

Turn On Time

331 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

IGBT Type

Trench

Gate Charge

129nC

Current - Collector Pulsed (Icm)

45A

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Height

20.1mm

Length

15.8mm

Width

5mm

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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