ON Semiconductor FGA30N60LSDTU

SKU: FGA30N60LSDTU-9

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Manufacturer Part :
FGA30N60LSDTU
Manufacturer :
ON Semiconductor
Package :
TO-3P-3, SC-65-3
RoHS :
ROHS3 Compliant
FGA30N60LSDTU Datasheet :
FGA30N60LSDTU

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Number of Pins

3

Weight

6.401g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 6.8 Ω, 15V

Max Power Dissipation

480W

Factory Lead Time

7 Weeks

Published

2013

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Gate Charge

225nC

Current - Collector Pulsed (Icm)

90A

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

35 ns

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 30A

Turn Off Time-Nom (toff)

2870 ns

IGBT Type

Trench Field Stop

Input Type

Standard

Power - Max

480W

Td (on/off) @ 25°C

18ns/250ns

Switching Energy

1.1mJ (on), 21mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Fall Time-Max (tf)

2000ns

Height

18.9mm

Length

15.8mm

Width

5mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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