ON Semiconductor FGA50N100BNTDTU

SKU: FGA50N100BNTDTU-9

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Manufacturer Part :
FGA50N100BNTDTU
Manufacturer :
ON Semiconductor
Package :
TO-3P-3, SC-65-3
RoHS :
ROHS3 Compliant
FGA50N100BNTDTU Datasheet :
FGA50N100BNTDTU

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Number of Pins

3

Weight

6.401g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Max Power Dissipation

156W

Factory Lead Time

5 Weeks

Published

2013

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Turn Off Time-Nom (toff)

760 ns

IGBT Type

NPT and Trench

Transistor Application

AUTOMOTIVE IGNITION

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1kV

Max Collector Current

50A

Reverse Recovery Time

1.5μs

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

460 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Power Dissipation

156W

Input Type

Standard

Gate Charge

275nC

Current - Collector Pulsed (Icm)

100A

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7V

Fall Time-Max (tf)

250ns

Height

20.1mm

Length

15.8mm

Width

5mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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