ON Semiconductor FGA60N65SMD

SKU: FGA60N65SMD-9

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Manufacturer Part :
FGA60N65SMD
Manufacturer :
ON Semiconductor
Package :
TO-3P-3, SC-65-3
RoHS :
ROHS3 Compliant
FGA60N65SMD Datasheet :
FGA60N65SMD

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Number of Pins

3

Weight

6.401g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 60A, 3 Ω, 15V

Turn Off Delay Time

104 ns

Max Power Dissipation

600W

Operating Temperature

-55°C~175°C TJ

Published

2008

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Mount

Through Hole

Factory Lead Time

7 Weeks

Gate Charge

189nC

Element Configuration

Single

Turn On Delay Time

18 ns

Power - Max

600W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

120A

Reverse Recovery Time

47 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 60A

IGBT Type

Field Stop

Current - Collector Pulsed (Icm)

180A

Td (on/off) @ 25°C

18ns/104ns

Rise Time-Max

70ns

Switching Energy

1.54mJ (on), 450μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

68ns

Height

20.1mm

Length

15.8mm

Width

5mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

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