ON Semiconductor FGAF40N60UFTU

SKU: FGAF40N60UFTU-9

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Manufacturer Part :
FGAF40N60UFTU
Manufacturer :
ON Semiconductor
Package :
TO-3P-3 Full Pack
RoHS :
ROHS3 Compliant
FGAF40N60UFTU Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Element Configuration

Single

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Number of Pins

3

Weight

6.962g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

300V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2004

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Max Power Dissipation

100W

Current Rating

40A

Mount

Through Hole

Factory Lead Time

8 Weeks

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

15ns/65ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Continuous Drain Current (ID)

40A

Drain to Source Breakdown Voltage

600V

Turn On Time

67 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Turn Off Time-Nom (toff)

190 ns

Gate Charge

77nC

Case Connection

ISOLATED

Power Dissipation

100W

Switching Energy

470μJ (on), 130μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

250ns

Height

26.5mm

Length

15.5mm

Width

5.5mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

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