ON Semiconductor FGB40N60SM

SKU: FGB40N60SM-9

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Manufacturer Part :
FGB40N60SM
Manufacturer :
ON Semiconductor
Package :
RoHS :
ROHS3 Compliant
FGB40N60SM Datasheet :
FGB40N60SM

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Rise Time-Max

28ns

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.31247g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 40A, 6 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

yes

Published

2013

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

349W

Terminal Form

GULL WING

Base Part Number

FGB40N60

JESD-30 Code

R-PSSO-G2

Mount

Surface Mount

Factory Lead Time

4 Weeks

Gate Charge

119nC

Current - Collector Pulsed (Icm)

120A

Power - Max

349W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Max Breakdown Voltage

600V

Turn On Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

Turn Off Time-Nom (toff)

132 ns

IGBT Type

Field Stop

Case Connection

COLLECTOR

Element Configuration

Single

Td (on/off) @ 25°C

12ns/92ns

Switching Energy

870μJ (on), 260μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

17ns

Height

4.83mm

Length

10.67mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

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