ON Semiconductor FGB7N60UNDF

SKU: FGB7N60UNDF-9

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Manufacturer Part :
FGB7N60UNDF
Manufacturer :
ON Semiconductor
Package :
RoHS :
ROHS3 Compliant
FGB7N60UNDF Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

JESD-609 Code

e3

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.31247g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 7A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Element Configuration

Single

Published

2013

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

83W

Terminal Form

GULL WING

JESD-30 Code

R-PSSO-G2

Mount

Surface Mount

Factory Lead Time

5 Weeks

Gate Charge

18nC

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

14A

Reverse Recovery Time

32.3 ns

Turn On Time

10.3 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 7A

Turn Off Time-Nom (toff)

146.8 ns

IGBT Type

NPT

Current - Collector Pulsed (Icm)

21A

Td (on/off) @ 25°C

5.9ns/32.3ns

Case Connection

COLLECTOR

Switching Energy

99μJ (on), 104μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

8.5V

Fall Time-Max (tf)

89ns

Height

4.83mm

Length

10.67mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Power - Max

83W

Lead Free

Lead Free

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