ON Semiconductor FGH40N65UFDTU

SKU: FGH40N65UFDTU-9

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Manufacturer Part :
FGH40N65UFDTU
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
FGH40N65UFDTU Datasheet :
FGH40N65UFDTU

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 40A, 10 Ω, 15V

Case Connection

COLLECTOR

Factory Lead Time

12 Weeks

Published

2008

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Max Power Dissipation

290W

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Gate Charge

120nC

Current - Collector Pulsed (Icm)

120A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Reverse Recovery Time

45 ns

JEDEC-95 Code

TO-247AB

Turn On Time

69 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Turn Off Time-Nom (toff)

160 ns

IGBT Type

Field Stop

Power - Max

290W

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

24ns/112ns

Switching Energy

1.19mJ (on), 460μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

60ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

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