ON Semiconductor FGH40T100SMD

SKU: FGH40T100SMD-9

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Manufacturer Part :
FGH40T100SMD
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
FGH40T100SMD Datasheet :
FGH40T100SMD

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2012

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Factory Lead Time

4 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

333W

Rise Time-Max

64ns

Packaging

Tube

Power Dissipation

333W

IGBT Type

Trench Field Stop

Gate Charge

265nC

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1kV

Max Collector Current

80A

Reverse Recovery Time

78 ns

JEDEC-95 Code

TO-247AB

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

76 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

Turn Off Time-Nom (toff)

305 ns

Case Connection

COLLECTOR

Input Type

Standard

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

29ns/285ns

Switching Energy

2.35mJ (on), 1.15mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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