ON Semiconductor FGH40T120SMD-F155

SKU: FGH40T120SMD-F155-9

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Manufacturer Part :
FGH40T120SMD-F155
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
FGH40T120SMD-F155 Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Turn Off Delay Time

475 ns

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

1.2kV

Power Dissipation

555W

Factory Lead Time

5 Weeks

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2013

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

555W

Element Configuration

Single

Test Conditions

600V, 40A, 10 Ω, 15V

Input Type

Standard

IGBT Type

Trench Field Stop

Gate Charge

370nC

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Reverse Recovery Time

65 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Max Junction Temperature (Tj)

175°C

Continuous Collector Current

80A

Turn On Delay Time

40 ns

Polarity/Channel Type

N-CHANNEL

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

40ns/475ns

Switching Energy

2.7mJ (on), 1.1mJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Height

24.75mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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