ON Semiconductor FGH50N3

SKU: FGH50N3-9

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Manufacturer Part :
FGH50N3
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
FGH50N3 Datasheet :
FGH50N3

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

300V

Number of Elements

1

Test Conditions

180V, 30A, 5 Ω, 15V

Turn Off Delay Time

135 ns

Max Power Dissipation

463W

Factory Lead Time

4 Weeks

Published

2002

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

300V

Operating Temperature

-55°C~150°C TJ

Current Rating

75A

Turn Off Time-Nom (toff)

162 ns

IGBT Type

PT

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

20 ns

Transistor Application

POWER CONTROL

Rise Time

15ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

300V

Max Collector Current

75A

Turn On Time

32 ns

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 30A

Element Configuration

Single

Power Dissipation

463W

Gate Charge

180nC

Current - Collector Pulsed (Icm)

240A

Td (on/off) @ 25°C

20ns/135ns

Switching Energy

130μJ (on), 92μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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