ON Semiconductor FGH50T65UPD

SKU: FGH50T65UPD-9

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Manufacturer Part :
FGH50T65UPD
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
FGH50T65UPD Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2013

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 50A, 6 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Factory Lead Time

50 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

340W

Rise Time-Max

77ns

Packaging

Tube

Case Connection

COLLECTOR

Gate Charge

230nC

Current - Collector Pulsed (Icm)

150A

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

100A

Reverse Recovery Time

53 ns

JEDEC-95 Code

TO-247AB

Turn On Time

101 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Turn Off Time-Nom (toff)

185 ns

IGBT Type

Trench Field Stop

Input Type

Standard

Power - Max

340W

Td (on/off) @ 25°C

32ns/160ns

Switching Energy

2.7mJ (on), 740μJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Fall Time-Max (tf)

29ns

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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