ON Semiconductor HGTG10N120BND

SKU: HGTG10N120BND-9

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Manufacturer Part :
HGTG10N120BND
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG10N120BND Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 10A, 10 Ω, 15V

Turn Off Delay Time

165 ns

Max Power Dissipation

298W

Factory Lead Time

7 Weeks

Published

2011

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

1.2kV

Operating Temperature

-55°C~150°C TJ

Current Rating

35A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Continuous Collector Current

35A

Input Type

Standard

Turn On Delay Time

23 ns

Transistor Application

MOTOR CONTROL

Rise Time

165ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

35A

Reverse Recovery Time

70 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

32 ns

Element Configuration

Single

Power Dissipation

298W

Turn Off Time-Nom (toff)

330 ns

IGBT Type

NPT

Gate Charge

100nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

23ns/165ns

Switching Energy

850μJ (on), 800μJ (off)

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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