ON Semiconductor HGTG11N120CND

SKU: HGTG11N120CND-9

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Manufacturer Part :
HGTG11N120CND
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG11N120CND Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Voltage - Rated DC

1.2kV

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

960V, 11A, 10 Ω, 15V

Turn Off Delay Time

180 ns

Packaging

Tube

Published

2016

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Mount

Through Hole

Factory Lead Time

5 Weeks

Turn On Time

33 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 11A

Element Configuration

Single

Power Dissipation

298W

Input Type

Standard

Turn On Delay Time

23 ns

Transistor Application

MOTOR CONTROL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

43A

Reverse Recovery Time

70 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Current Rating

43A

Max Power Dissipation

298W

Turn Off Time-Nom (toff)

570 ns

IGBT Type

NPT

Gate Charge

100nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

23ns/180ns

Switching Energy

950μJ (on), 1.3mJ (off)

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity

NPN

Lead Free

Lead Free

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