ON Semiconductor HGTG12N60A4D

SKU: HGTG12N60A4D-9

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Manufacturer Part :
HGTG12N60A4D
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG12N60A4D Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 12A, 10 Ω, 15V

Turn Off Delay Time

96 ns

Current Rating

54A

Operating Temperature

-55°C~150°C TJ

Published

2002

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Max Power Dissipation

167W

Contact Plating

Tin

Factory Lead Time

4 Weeks

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

17 ns

Transistor Application

POWER CONTROL

Rise Time

16ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

54A

Reverse Recovery Time

30 ns

Turn On Time

33 ns

Continuous Collector Current

60A

Turn Off Time-Nom (toff)

180 ns

Base Part Number

HGTG12N60

Gate Charge

78nC

Current - Collector Pulsed (Icm)

96A

Td (on/off) @ 25°C

17ns/96ns

Switching Energy

55μJ (on), 50μJ (off)

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

167W

Lead Free

Lead Free

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