ON Semiconductor HGTG12N60C3D

SKU: HGTG12N60C3D-9

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Manufacturer Part :
HGTG12N60C3D
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG12N60C3D Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

1997

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Voltage - Rated DC

600V

Factory Lead Time

36 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Packaging

Tube

Max Power Dissipation

104W

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 15A

Turn Off Time-Nom (toff)

480 ns

Element Configuration

Single

Power Dissipation

104W

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

24A

Reverse Recovery Time

42 ns

Turn On Time

30 ns

Current Rating

24A

Base Part Number

HGTG12N60

Gate Charge

48nC

Current - Collector Pulsed (Icm)

96A

Switching Energy

380μJ (on), 900μJ (off)

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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