ON Semiconductor HGTG18N120BN

SKU: HGTG18N120BN-9

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Manufacturer Part :
HGTG18N120BN
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG18N120BN Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Voltage - Rated DC

1.2kV

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 18A, 3 Ω, 15V

Packaging

Tube

Published

2001

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Mount

Through Hole

Factory Lead Time

14 Weeks

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 18A

Element Configuration

Single

Power Dissipation

390W

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

54A

Voltage - Collector Emitter Breakdown (Max)

1200V

Current Rating

54A

Max Power Dissipation

390W

Turn Off Time-Nom (toff)

345 ns

IGBT Type

NPT

Gate Charge

165nC

Current - Collector Pulsed (Icm)

165A

Td (on/off) @ 25°C

23ns/170ns

Switching Energy

800μJ (on), 1.8mJ (off)

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

JESD-30 Code

R-PSFM-T3

Lead Free

Lead Free

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