ON Semiconductor HGTG20N60A4

SKU: HGTG20N60A4-9

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Manufacturer Part :
HGTG20N60A4
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG20N60A4 Datasheet :
HGTG20N60A4

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 20A, 3 Ω, 15V

Turn Off Delay Time

73 ns

Current Rating

70A

Operating Temperature

-55°C~150°C TJ

Published

2011

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Max Power Dissipation

290W

Contact Plating

Tin

Factory Lead Time

4 Weeks

Turn Off Time-Nom (toff)

160 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

15 ns

Transistor Application

POWER CONTROL

Rise Time

12ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

70A

Turn On Time

28 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Gate Charge

142nC

Current - Collector Pulsed (Icm)

280A

Base Part Number

HGTG20N60

Td (on/off) @ 25°C

15ns/73ns

Switching Energy

105μJ (on), 150μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

290W

Lead Free

Lead Free

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