ON Semiconductor HGTG20N60A4D

SKU: HGTG20N60A4D-9

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Manufacturer Part :
HGTG20N60A4D
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG20N60A4D Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2011

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 20A, 3 Ω, 15V

Turn Off Delay Time

73 ns

Operating Temperature

-55°C~150°C TJ

Current Rating

70A

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Max Power Dissipation

290W

Mount

Through Hole

Factory Lead Time

4 Weeks

Turn On Time

28 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

15 ns

Transistor Application

POWER CONTROL

Rise Time

12ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

70A

Reverse Recovery Time

35 ns

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Turn Off Time-Nom (toff)

160 ns

Base Part Number

HGTG20N60

Gate Charge

142nC

Current - Collector Pulsed (Icm)

280A

Td (on/off) @ 25°C

15ns/73ns

Switching Energy

105μJ (on), 150μJ (off)

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

290W

Lead Free

Lead Free

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