ON Semiconductor HGTG20N60B3D

SKU: HGTG20N60B3D-9

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Manufacturer Part :
HGTG20N60B3D
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG20N60B3D Datasheet :
HGTG20N60B3D

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Max Power Dissipation

165W

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Turn Off Delay Time

220 ns

Operating Temperature

-40°C~150°C TJ

Published

2011

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

55ns

Max Breakdown Voltage

600V

Element Configuration

Single

Power Dissipation

165W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

25 ns

Transistor Application

MOTOR CONTROL

Rise Time

20ns

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Base Part Number

HGTG20N60

Current Rating

20A

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Turn Off Time-Nom (toff)

360 ns

Gate Charge

80nC

Current - Collector Pulsed (Icm)

160A

Switching Energy

475μJ (on), 1.05mJ (off)

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity

NPN

Lead Free

Lead Free

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