ON Semiconductor HGTG30N60B3

SKU: HGTG30N60B3-9

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Manufacturer Part :
HGTG30N60B3
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG30N60B3 Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2013

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 30A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

HGTG30N60

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Max Power Dissipation

208W

Current Rating

60A

Contact Plating

Tin

Factory Lead Time

4 Weeks

Gate Charge

170nC

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Max Breakdown Voltage

600V

Turn On Time

56 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Continuous Collector Current

60A

Turn Off Time-Nom (toff)

365 ns

Current - Collector Pulsed (Icm)

220A

Td (on/off) @ 25°C

36ns/137ns

Polarity

NPN

Switching Energy

500μJ (on), 680μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

150ns

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

208W

Lead Free

Lead Free

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