ON Semiconductor HGTG30N60C3D

SKU: HGTG30N60C3D-9

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Manufacturer Part :
HGTG30N60C3D
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG30N60C3D Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2011

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Turn Off Delay Time

320 ns

Operating Temperature

-40°C~150°C TJ

Max Power Dissipation

208W

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Mount

Through Hole

Factory Lead Time

7 Weeks

Turn On Time

85 ns

Base Part Number

HGTG30N60

Element Configuration

Single

Power Dissipation

208W

Input Type

Standard

Turn On Delay Time

40 ns

Transistor Application

MOTOR CONTROL

Rise Time

45ns

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

63A

Reverse Recovery Time

60ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Turn Off Time-Nom (toff)

550 ns

Current Rating

30A

Gate Charge

162nC

Current - Collector Pulsed (Icm)

252A

Switching Energy

1.05mJ (on), 2.5mJ (off)

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity

NPN

Lead Free

Lead Free

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