ON Semiconductor HGTP10N120BN

SKU: HGTP10N120BN-9

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Manufacturer Part :
HGTP10N120BN
Manufacturer :
ON Semiconductor
Package :
TO-220-3
RoHS :
ROHS3 Compliant
HGTP10N120BN Datasheet :
HGTP10N120BN

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Description

Specification

Processor

Manufacturer

ON Semiconductor

JESD-609 Code

e3

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

1.8g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 10A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Current Rating

35A

Packaging

Tube

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

1.2kV

Max Power Dissipation

49.2W

Mount

Through Hole

Factory Lead Time

44 Weeks

Continuous Collector Current

35A

Power Dissipation

298W

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

35A

Voltage - Collector Emitter Breakdown (Max)

1200V

Max Breakdown Voltage

300V

Turn On Time

32 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Turn Off Time-Nom (toff)

330 ns

IGBT Type

NPT

Element Configuration

Single

Gate Charge

100nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

23ns/165ns

Switching Energy

320μJ (on), 800μJ (off)

Height

9.4mm

Length

10.67mm

Width

4.83mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

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