ON Semiconductor HGTP12N60A4D

SKU: HGTP12N60A4D-9

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Manufacturer Part :
HGTP12N60A4D
Manufacturer :
ON Semiconductor
Package :
TO-220-3
RoHS :
ROHS3 Compliant
HGTP12N60A4D Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2002

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

1.8g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 12A, 10 Ω, 15V

Turn Off Delay Time

96 ns

Operating Temperature

-55°C~150°C TJ

Current Rating

54A

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Max Power Dissipation

167W

Mount

Through Hole

Factory Lead Time

5 Weeks

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

17 ns

Transistor Application

POWER CONTROL

Rise Time

8ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

54A

Reverse Recovery Time

18 ns

Turn On Time

33 ns

Continuous Collector Current

54A

Turn Off Time-Nom (toff)

180 ns

Base Part Number

HGTP12N60

Gate Charge

78nC

Current - Collector Pulsed (Icm)

96A

Td (on/off) @ 25°C

17ns/96ns

Switching Energy

55μJ (on), 50μJ (off)

Height

9.4mm

Length

10.67mm

Width

4.83mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

167W

Lead Free

Lead Free

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